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NP110N04PUK-E1-AY

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Mfr.:Renesas(瑞萨)
Mfr. Part #:
YJC. No:
Package:TO-263-3
ECCN:EAR99
Description:MOSFET N-CH 40V 110A TO-263
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
Termination type
表面贴装
VDS
40V
Package
TO-263-3
Operating Temperature Range
175°C(TJ)
Pd-Power Dissipation
1.8W 348W
类型
1个N沟道
漏源电压(Vdss)
40V
连续漏极电流(Id)
110A
导通电阻(RDS(on)@Vgs,Id)
1.4mΩ@55A,10V
功率(Pd)
348W;1.8W
阈值电压(Vgs(th)@Id)
4V@250uA
栅极电荷(Qg@Vgs)
297nC@10V
输入电容(Ciss@Vds)
15.75nF@25V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
52.49186
10+
44.04218
100+
35.63208
QTY(Multiplicity:1):
Stock:
14,400
Mpq:
800
Delivery:
14-19 Business Day
Total:
52.50
C000010464 NP110N04PUK-E1-AY is designed and produced by Renesas(瑞萨), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000010464 NP110N04PUK-E1-AY reference price ¥52.4919,real-time inventory 14400. TO-263-3 Termination type: 表面贴装, VDS: 40V, Package: TO-263-3, Operating Temperature Range: 175°C(TJ), Pd-Power Dissipation: 1.8W 348W, 类型: 1个N沟道, 漏源电压(Vdss): 40V, 连续漏极电流(Id): 110A, 导通电阻(RDS(on)@Vgs,Id): 1.4mΩ@55A,10V, 功率(Pd): 348W;1.8W, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 297nC@10V, 输入电容(Ciss@Vds): 15.75nF@25V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NP110N04PUK-E1-AY, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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