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TK750A60F,S4X

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Mfr.:Toshiba(东芝)
Mfr. Part #:
YJC. No:
Package:TO-220SIS
ECCN:EAR99
Description:N-Channel 600V 10A (Ta) 40W (Tc) Through Hole TO-220SIS
Datasheet:
SPECIFICATION
Category
RFFETMOSFET
VDS
600V
Pd-Power Dissipation
40W
Termination type
Through Hole
Circuit Branch Number
1Channel
Package
TO-220SIS
Continuous drain current
10A
Rds On
0.75Ω
Qg
30 nC
VGS
30V
Operating Temperature Range
150℃
Transistor polarity
MOSFET
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
10A
功率(Pd)
40W
导通电阻(RDS(on)@Vgs,Id)
750mΩ@5A,10V
阈值电压(Vgs(th)@Id)
4V@1mA
栅极电荷(Qg@Vgs)
30nC@10V
输入电容(Ciss@Vds)
1.13nF@300V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
15.80888
10+
13.18966
100+
10.38335
250+
10.00918
500+
8.76505
1000+
7.51156
QTY(Multiplicity:1):
Stock:
12,450
Mpq:
50
Delivery:
18-20 Business Day
Total:
15.81

C000017972 TK750A60F,S4X is designed and produced by Toshiba(东芝), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000017972 TK750A60F,S4X reference price ¥15.8089,real-time inventory 12450. TO-220SIS VDS: 600V, Pd-Power Dissipation: 40W, Termination type: Through Hole, Circuit Branch Number: 1Channel, Package: TO-220SIS, Continuous drain current: 10A, Rds On: 0.75Ω, Qg: 30 nC, VGS: 30V, Operating Temperature Range: 150℃, Transistor polarity: MOSFET, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 10A, 功率(Pd): 40W, 导通电阻(RDS(on)@Vgs,Id): 750mΩ@5A,10V, 阈值电压(Vgs(th)@Id): 4V@1mA, 栅极电荷(Qg@Vgs): 30nC@10V, 输入电容(Ciss@Vds): 1.13nF@300V. You can download the Chinese information, pin diagram, datasheet data manual function manual of TK750A60F,S4X, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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