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FGD3245G2-F085

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:TO-252AA
ECCN:EAR99
Description:IGBT 450V 23A 150W 表面贴装型 TO-252AA
Datasheet:
SPECIFICATION
Category
MOSFET
Qualification level
AEC-Q101
Package
TO-252AA
Operating Temperature Range
-40℃~175℃
Max, gate / emitter voltage
10V
Collector Current Ic
13A
Gate Threshold Voltage-VGE(th)
10V
Pd-Power Dissipation
150W
Termination type
SMD/SMT
Collector-emitter voltage
450V
集射极击穿电压(Vces)
450V
集电极电流(Ic)
23A
功率(Pd)
150W
栅极阈值电压(Vge(th)@Ic)
1.25V@4V,6A
栅极电荷(Qg@Ic,Vge)
23nC
开启延迟时间(Td(on))
900ns
关断延迟时间(Td(off))
5.4us
工作温度
-40℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
24.07451
10+
19.95824
100+
15.88251
500+
13.43937
1000+
11.40315
QTY(Multiplicity:1):
Stock:
97,500
Mpq:
2500
Delivery:
14-19 Business Day
Total:
24.08

C000018952 FGD3245G2-F085 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000018952 FGD3245G2-F085 reference price ¥24.0745,real-time inventory 97500. TO-252AA Qualification level: AEC-Q101, Package: TO-252AA, Operating Temperature Range: -40℃~175℃, Max, gate / emitter voltage: 10V, Collector Current Ic: 13A, Gate Threshold Voltage-VGE(th): 10V, Pd-Power Dissipation: 150W, Termination type: SMD/SMT, Collector-emitter voltage: 450V, 集射极击穿电压(Vces): 450V, 集电极电流(Ic): 23A, 功率(Pd): 150W, 栅极阈值电压(Vge(th)@Ic): 1.25V@4V,6A, 栅极电荷(Qg@Ic,Vge): 23nC, 开启延迟时间(Td(on)): 900ns, 关断延迟时间(Td(off)): 5.4us, 工作温度: -40℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of FGD3245G2-F085, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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