产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商: | Vishay(威世) |
型号: | |
编号: | |
封装: | SO-8 |
海关编码: | EAR99 |
参数描述: | Mosfet Array 2 N-Channel (Dual) 30V 25A 22W Surface Mount PowerPAK® SO-8 Dual |
数据手册: | |
规格
Transistor polarity
MOSFET
Circuit Branch Number
2Channel
Operating Temperature Range
150℃~-55℃
Continuous drain current
25A
导通电阻(RDS(on)@Vgs,Id)
9.3mΩ@15A,10V
阈值电压(Vgs(th)@Id)
2.5V@250uA
C000023384 SI7272DP-T1-GE3 is designed and produced by Vishay(威世), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000023384 SI7272DP-T1-GE3 reference price ¥13.5006,real-time inventory 309000. SO-8 VDS: 30V, Package: SO-8, Rds On: 0.0093Ω, Transistor polarity: MOSFET, Circuit Branch Number: 2Channel, VGS: 10V, Qg: 17 nC, Height: 1.04 mm, Termination type: SMD/SMT, Operating Temperature Range: 150℃~-55℃, Pd-Power Dissipation: 22W, Continuous drain current: 25A, Length: 6.15 mm, Width: 5.15 mm, 类型: 2个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 25A, 功率(Pd): 22W, 导通电阻(RDS(on)@Vgs,Id): 9.3mΩ@15A,10V, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 26nC@10V, 输入电容(Ciss@Vds): 1.1nF@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SI7272DP-T1-GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.