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MMBFJ111

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:JFET N 通道 35V 350mW 表面贴装型 SOT-23-3
Datasheet:
Datasheet
SPECIFICATION
Category
Junction Field Effect Transistor (JFET)
Pd-Power Dissipation
0.35W
Rds On
30Ω
Termination type
SMD/SMT
Package
SOT-23
Operating Temperature Range
-55℃~150℃
VGS
3V
Transistor polarity
JFET
FET类型
N沟道
栅源截止电压(VGS(off)@ID)
3V@1uA
栅源击穿电压(V(BR)GSS)
35V
功率(Pd)
350mW
漏源导通电阻(RDS(on))
30Ω
饱和漏源电流(Idss@Vds,Vgs=0)
20mA@15V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
3.70819
10+
2.96655
100+
2.036361
500+
1.99865
QTY(Multiplicity:1):
Stock:
378,594
Mpq:
1
Delivery:
13-17 Business Day
Total:
203.64
C000051088 MMBFJ111 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000051088 MMBFJ111 reference price ¥3.7082,real-time inventory 378594. SOT-23 Pd-Power Dissipation: 0.35W, Rds On: 30Ω, Termination type: SMD/SMT, Package: SOT-23, Operating Temperature Range: -55℃~150℃, VGS: 3V, Transistor polarity: JFET, FET类型: N沟道, 栅源截止电压(VGS(off)@ID): 3V@1uA, 栅源击穿电压(V(BR)GSS): 35V, 功率(Pd): 350mW, 漏源导通电阻(RDS(on)): 30Ω, 饱和漏源电流(Idss@Vds,Vgs=0): 20mA@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBFJ111, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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