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NXPSC08650Q

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Mfr.:WeEn(瑞能)
Mfr. Part #:
YJC. No:
Package:
ECCN:EAR99
Description:Diode Silicon Carbide Schottky 650V 8A Through Hole TO-220AC
Datasheet:
SPECIFICATION
Category
Rectifier Diode
If-forward Current
8A
Vr-reverse voltage
650V
Termination type
通孔
Reverse recovery time
0nS
junction capacitance
260pF
Temperature Coefficient
碳化硅
Reverse Leakage Current
0.00005A
Configuration
独立式
Operating Temperature-Max
+175℃
Vf-Forward Voltage
1.5V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
46.29529
10+
39.84263
100+
33.197921
500+
30.62454
1000+
27.8079
QTY(Multiplicity:1):
Stock:
22,705
Mpq:
1
Delivery:
14-16 Business Day
Total:
46.30

C000057263 NXPSC08650Q is designed and produced by WeEn(瑞能), and is available for sale in the Discrete Semiconductor-Diode-Rectifier Diode of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000057263 NXPSC08650Q reference price ¥46.2953,real-time inventory 22705. If-forward Current: 8A, Vr-reverse voltage: 650V, Termination type: 通孔, Reverse recovery time: 0nS, junction capacitance: 260pF, Temperature Coefficient: 碳化硅, Reverse Leakage Current: 0.00005A, Configuration: 独立式, Operating Temperature-Max: +175℃, Vf-Forward Voltage: 1.5V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NXPSC08650Q, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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