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NP100N04PUK-E1-AY

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Mfr.:Renesas(瑞萨)
Mfr. Part #:
YJC. No:
Package:TO-263
ECCN:EAR99
Description:MOSFET N-CH 40V 100A TO-263
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
Operating Temperature Range
175°C(TJ)
Package
TO-263
VDS
40V
Pd-Power Dissipation
176W 1.8W
Termination type
表面贴装
类型
1个N沟道
漏源电压(Vdss)
40V
连续漏极电流(Id)
100A
导通电阻(RDS(on)@Vgs,Id)
2.3mΩ@50A,10V
功率(Pd)
176W;1.8W
栅极电荷(Qg@Vgs)
120nC@10V
输入电容(Ciss@Vds)
7.05nF@25V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
800+
16.9043
1600+
14.47433
2400+
13.62906
5600+
13.07576
QTY(Multiplicity:800):
Stock:
6,400
Mpq:
800
Delivery:
14-19 Business Day
Total:
13,523.44
C000104314 NP100N04PUK-E1-AY is designed and produced by Renesas(瑞萨), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000104314 NP100N04PUK-E1-AY reference price ¥16.9043,real-time inventory 6400. TO-263 Operating Temperature Range: 175°C(TJ), Package: TO-263, VDS: 40V, Pd-Power Dissipation: 176W 1.8W, Termination type: 表面贴装, 类型: 1个N沟道, 漏源电压(Vdss): 40V, 连续漏极电流(Id): 100A, 导通电阻(RDS(on)@Vgs,Id): 2.3mΩ@50A,10V, 功率(Pd): 176W;1.8W, 栅极电荷(Qg@Vgs): 120nC@10V, 输入电容(Ciss@Vds): 7.05nF@25V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NP100N04PUK-E1-AY, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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