SQ2337ES-T1_GE3

C000106939 SQ2337ES-T1_GE3 is designed and produced by Vishay(威世), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000106939 SQ2337ES-T1_GE3 reference price ￥2.1237，real-time inventory 2160000. SOT-23-3 Termination type: SMD/SMT, Circuit Branch Number: 1Channel, Continuous drain current: 2.2A, Length: 2.9 mm, Width: 1.6 mm, VGS: 10V, Transistor polarity: MOSFET, Package: SOT-23-3, Rds On: 0.29Ω, Operating Temperature Range: -55℃~175℃, Qualification level: AEC-Q101, Qg: 11.5 nC, Pd-Power Dissipation: 3W, Height: 1.45 mm, VDS: 80V, 类型: 1个P沟道, 漏源电压(Vdss): 80V, 连续漏极电流(Id): 2.2A, 功率(Pd): 3W, 导通电阻(RDS(on)@Vgs,Id): 290mΩ@1A,4.5V, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 18nC@10V, 输入电容(Ciss@Vds): 620pF@30V, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SQ2337ES-T1_GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.