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产商: | ON(安森美) |
型号: | |
编号: | |
封装: | TO-252-2(DPAK) |
海关编码: | EAR99 |
参数描述: | PNP,Vceo=350V,Ic=1A |
数据手册: | |
规格
Category
Bipolar Transistor (triode)
Circuit Branch Number
Single
Operating Temperature Range
-55℃~150℃
Collector-emitter voltage
350V
Pd-Power Dissipation
1.56W
直流电流增益(hFE@Ic,Vce)
30@300mA,10V
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
1V@1A,200mA
C000107288 MJD5731T4G is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000107288 MJD5731T4G reference price ¥6.4143,real-time inventory 242800. TO-252-2(DPAK) Transistor polarity: PNP, Circuit Branch Number: Single, Collector Current Ic: 1A, Package: TO-252-2(DPAK), Height: 2.38 mm, Operating Temperature Range: -55℃~150℃, Collector-emitter voltage: 350V, Width: 6.22 mm, Length: 6.73 mm, Termination type: SMD/SMT, Pd-Power Dissipation: 1.56W, 晶体管类型: PNP, 集电极电流(Ic): 1A, 集射极击穿电压(Vceo): 350V, 功率(Pd): 1.56W, 直流电流增益(hFE@Ic,Vce): 30@300mA,10V, 特征频率(fT): 10MHz, 集电极截止电流(Icbo): 100uA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 1V@1A,200mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MJD5731T4G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.