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NP36P06SLG-E1-AY

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Mfr.:Renesas(瑞萨)
Mfr. Part #:
YJC. No:
Package:TO-252
ECCN:EAR99
Description:MOSFET P-CH 60V 36A TO-252
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
Package
TO-252
VDS
60V
Termination type
表面贴装
Operating Temperature Range
175°C(TJ)
Pd-Power Dissipation
56W 1.2W
类型
1个P沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
36A
功率(Pd)
56W;1.2W
导通电阻(RDS(on)@Vgs,Id)
30mΩ@18A,10V
栅极电荷(Qg@Vgs)
52nC@10V
输入电容(Ciss@Vds)
3.2nF@10V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
15.86085
10+
13.1985
100+
10.50591
500+
8.88942
1000+
7.54248
QTY(Multiplicity:1):
Stock:
115,000
Mpq:
2500
Delivery:
14-19 Business Day
Total:
15.87
C000119258 NP36P06SLG-E1-AY is designed and produced by Renesas(瑞萨), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000119258 NP36P06SLG-E1-AY reference price ¥15.8609,real-time inventory 115000. TO-252 Package: TO-252, VDS: 60V, Termination type: 表面贴装, Operating Temperature Range: 175°C(TJ), Pd-Power Dissipation: 56W 1.2W, 类型: 1个P沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 36A, 功率(Pd): 56W;1.2W, 导通电阻(RDS(on)@Vgs,Id): 30mΩ@18A,10V, 栅极电荷(Qg@Vgs): 52nC@10V, 输入电容(Ciss@Vds): 3.2nF@10V. You can download the Chinese information, pin diagram, datasheet data manual function manual of NP36P06SLG-E1-AY, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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