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EMX1DXV6T1G

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:SOT-563
ECCN:EAR99
Description:
Datasheet:
Datasheet
SPECIFICATION
Category
Bipolar Transistor (triode)
Pd-Power Dissipation
0.5W
Collector Current Ic
0.1A
Package
SOT-563
Collector-emitter voltage
50V
Transistor polarity
2 NPN(双)
晶体管类型
NPN
集电极电流(Ic)
100mA
集射极击穿电压(Vceo)
50V
功率(Pd)
500mW
直流电流增益(hFE@Ic,Vce)
120@1mA,6V
特征频率(fT)
180MHz
集电极截止电流(Icbo)
500nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
400mV@5mA,50mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
3.27403
10+
2.40408
100+
1.12253
1000+
0.80448
4000+
0.79513
8000+
0.65481
QTY(Multiplicity:1):
Stock:
1,076,000
Mpq:
4000
Delivery:
18-20 Business Day
Total:
3.28
C000121677 EMX1DXV6T1G is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000121677 EMX1DXV6T1G reference price ¥3.274,real-time inventory 1076000. SOT-563 Pd-Power Dissipation: 0.5W, Collector Current Ic: 0.1A, Package: SOT-563, Collector-emitter voltage: 50V, Transistor polarity: 2 NPN(双), 晶体管类型: NPN, 集电极电流(Ic): 100mA, 集射极击穿电压(Vceo): 50V, 功率(Pd): 500mW, 直流电流增益(hFE@Ic,Vce): 120@1mA,6V, 特征频率(fT): 180MHz, 集电极截止电流(Icbo): 500nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 400mV@5mA,50mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of EMX1DXV6T1G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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