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N0601N-ZK-E1-AY

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Mfr.:Renesas(瑞萨)
Mfr. Part #:
YJC. No:
Package:TO-263
ECCN:EAR99
Description:MOSFET N-CH 60V 100A TO-263
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
VDS
60V
Operating Temperature Range
150°C(TJ)
Termination type
表面贴装
Pd-Power Dissipation
156W 1.5W
Package
TO-263
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
100A
导通电阻(RDS(on)@Vgs,Id)
4.2mΩ@50A,10V
功率(Pd)
156W;1.5W
栅极电荷(Qg@Vgs)
133nC@10V
输入电容(Ciss@Vds)
7.73nF@25V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
800+
15.10401
1600+
12.81549
2400+
12.1748
5600+
11.71704
QTY(Multiplicity:800):
Stock:
11,200
Mpq:
800
Delivery:
14-19 Business Day
Total:
12,083.21
C000127590 N0601N-ZK-E1-AY is designed and produced by Renesas(瑞萨), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000127590 N0601N-ZK-E1-AY reference price ¥15.104,real-time inventory 11200. TO-263 VDS: 60V, Operating Temperature Range: 150°C(TJ), Termination type: 表面贴装, Pd-Power Dissipation: 156W 1.5W, Package: TO-263, 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 100A, 导通电阻(RDS(on)@Vgs,Id): 4.2mΩ@50A,10V, 功率(Pd): 156W;1.5W, 栅极电荷(Qg@Vgs): 133nC@10V, 输入电容(Ciss@Vds): 7.73nF@25V. You can download the Chinese information, pin diagram, datasheet data manual function manual of N0601N-ZK-E1-AY, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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