SIR120DP-T1-RE3

C000167471 SIR120DP-T1-RE3 is designed and produced by Vishay(威世), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000167471 SIR120DP-T1-RE3 reference price ￥15.3412，real-time inventory 384000. SO-8 Pd-Power Dissipation: 100W, Termination type: SMD/SMT, Operating Temperature Range: -55℃~150℃, Qg: 62.5 nC, VGS: 20V, VDS: 80V, Rds On: 0.00355Ω, Circuit Branch Number: 1Channel, Continuous drain current: 106A, Transistor polarity: MOSFET, Package: SO-8, 类型: 1个N沟道, 漏源电压(Vdss): 80V, 连续漏极电流(Id): 24.7A；106A, 导通电阻(RDS(on)@Vgs,Id): 3.55mΩ@15A,10V, 功率(Pd): 100W；5.4W, 阈值电压(Vgs(th)@Id): 3.5V@250uA, 栅极电荷(Qg@Vgs): 94nC@10V, 输入电容(Ciss@Vds): 4.15nF@40V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SIR120DP-T1-RE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.