SIR416DP-T1-GE3

C000195409 SIR416DP-T1-GE3 is designed and produced by Vishay(威世), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000195409 SIR416DP-T1-GE3 reference price ￥5.0761，real-time inventory 45000. SO-8 Package: SO-8, Pd-Power Dissipation: 0.2W 69W, Operating Temperature Range: -55℃~150℃, Termination type: 表面贴装型, VDS: 40V, 类型: 1个N沟道, 漏源电压(Vdss): 40V, 连续漏极电流(Id): 50A, 功率(Pd): 5.2W；69W, 导通电阻(RDS(on)@Vgs,Id): 3.8mΩ@15A,10V, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 90nC@10V, 输入电容(Ciss@Vds): 3.35nF@20V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SIR416DP-T1-GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.