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2SK208-GR(TE85L,F)

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Mfr.:Toshiba(东芝)
Mfr. Part #:
YJC. No:
Package:SC-59
ECCN:EAR99
Description:JFET N-CH 50V SC59
Datasheet:
Datasheet
SPECIFICATION
Category
Junction Field Effect Transistor (JFET)
Operating Temperature Range
125℃
Termination type
表面贴装型
Transistor polarity
JFET
Pd-Power Dissipation
0.1W
Package
SC-59
VGS
400mV 0.0000001A
Continuous drain current
0.0065A
FET类型
N沟道
栅源截止电压(VGS(off)@ID)
400mV@100nA
栅源击穿电压(V(BR)GSS)
50V
功率(Pd)
100mW
饱和漏源电流(Idss@Vds,Vgs=0)
2.6mA@10V
输入电容(Ciss@Vds)
8.2pF@10V
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
4.43727
10+
3.47429
100+
2.085511
500+
1.93082
1000+
1.31299
QTY(Multiplicity:1):
Stock:
222,000
Mpq:
3000
Delivery:
14-19 Business Day
Total:
4.44
C000201680 2SK208-GR(TE85L,F) is designed and produced by Toshiba(东芝), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000201680 2SK208-GR(TE85L,F) reference price ¥4.4373,real-time inventory 222000. SC-59 Operating Temperature Range: 125℃, Termination type: 表面贴装型, Transistor polarity: JFET, Pd-Power Dissipation: 0.1W, Package: SC-59, VGS: 400mV 0.0000001A, Continuous drain current: 0.0065A, FET类型: N沟道, 栅源截止电压(VGS(off)@ID): 400mV@100nA, 栅源击穿电压(V(BR)GSS): 50V, 功率(Pd): 100mW, 饱和漏源电流(Idss@Vds,Vgs=0): 2.6mA@10V, 输入电容(Ciss@Vds): 8.2pF@10V. You can download the Chinese information, pin diagram, datasheet data manual function manual of 2SK208-GR(TE85L,F), and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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