60N06

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Mfr.:	Goford
Mfr. Part #:	60N06
YJC. No:	C000226489
Package:	TO-252-2(DPAK)
ECCN:	EAR99
Description:	N沟道,60V,60A,14mΩ@10V
Datasheet:

SPECIFICATION

Category

MOSFET

Package

TO-252-2(DPAK)

VDS

60V

VGS

0.00025A 2.5V

Continuous drain current

60A

Transistor polarity

N沟道

Rds On

10V 0.02Ω 20A

Pd-Power Dissipation

85W

类型

1个N沟道

漏源电压(Vdss)

60V

连续漏极电流(Id)

50A

导通电阻(RDS(on)@Vgs,Id)

14mΩ

功率(Pd)

85W

阈值电压(Vgs(th)@Id)

2V@250uA

栅极电荷(Qg@Vgs)

50nC@10V

输入电容(Ciss@Vds)

2.05nF@30V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

2500+

2.58172

5000+

2.44574

12500+

2.26463

25000+

2.24219

QTY(Multiplicity:2500):

Stock:

10,000

+-

Add To Cart

Quota

Mpq:

2500

Delivery:

14-19 Business Day

Total:

￥6,454.30

C000226489 60N06 is designed and produced by Goford, and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000226489 60N06 reference price ￥2.5817，real-time inventory 10000. TO-252-2(DPAK) Package: TO-252-2(DPAK), VDS: 60V, VGS: 0.00025A 2.5V, Continuous drain current: 60A, Transistor polarity: N沟道, Rds On: 10V 0.02Ω 20A, Pd-Power Dissipation: 85W, 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 50A, 导通电阻(RDS(on)@Vgs,Id): 14mΩ, 功率(Pd): 85W, 阈值电压(Vgs(th)@Id): 2V@250uA, 栅极电荷(Qg@Vgs): 50nC@10V, 输入电容(Ciss@Vds): 2.05nF@30V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of 60N06, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.