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STP26N65DM2

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Mfr.:ST(意法半导体)
Mfr. Part #:
YJC. No:
Package:TO-220
ECCN:EAR99
Description:
Datasheet:
SPECIFICATION
Category
MOSFET
Pd-Power Dissipation
170W
VDS
650V
Termination type
通孔
Package
TO-220
Operating Temperature Range
-55℃~150℃
类型
1个N沟道
漏源电压(Vdss)
650V
连续漏极电流(Id)
20A
功率(Pd)
170W
导通电阻(RDS(on)@Vgs,Id)
156mΩ@10V,10A
阈值电压(Vgs(th)@Id)
4V@250uA
栅极电荷(Qg@Vgs)
35.5nC@0~10V
输入电容(Ciss@Vds)
1.48nF@100V
反向传输电容(Crss@Vds)
2pF@100V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
35.30927
10+
29.6258
100+
23.9678
500+
21.30431
1000+
18.2418
2000+
17.17661
QTY(Multiplicity:1):
Stock:
6,000
Mpq:
1000
Delivery:
14-19 Business Day
Total:
35.31

C000273217 STP26N65DM2 is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000273217 STP26N65DM2 reference price ¥35.3093,real-time inventory 6000. TO-220 Pd-Power Dissipation: 170W, VDS: 650V, Termination type: 通孔, Package: TO-220, Operating Temperature Range: -55℃~150℃, 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 20A, 功率(Pd): 170W, 导通电阻(RDS(on)@Vgs,Id): 156mΩ@10V,10A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 35.5nC@0~10V, 输入电容(Ciss@Vds): 1.48nF@100V, 反向传输电容(Crss@Vds): 2pF@100V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STP26N65DM2, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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