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MMBTA06_R1_00001

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Mfr.:PANJIT(强茂)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:Trans GP BJT NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
Collector-emitter voltage
80V
Collector Current Ic
0.5A
Package
SOT-23
Pd-Power Dissipation
0.225W
Transistor polarity
NPN
晶体管类型
NPN
集电极电流(Ic)
500mA
集射极击穿电压(Vceo)
80V
功率(Pd)
225mW
直流电流增益(hFE@Ic,Vce)
100@100mA,1V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
250mV@10mA,100mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
3000+
0.32585
QTY(Multiplicity:3000):
Stock:
240,000
Mpq:
3000
Delivery:
15-18 Business Day
Total:
977.55

C000387983 MMBTA06_R1_00001 is designed and produced by PANJIT(强茂), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000387983 MMBTA06_R1_00001 reference price ¥0.3259,real-time inventory 240000. SOT-23 Collector-emitter voltage: 80V, Collector Current Ic: 0.5A, Package: SOT-23, Pd-Power Dissipation: 0.225W, Transistor polarity: NPN, 晶体管类型: NPN, 集电极电流(Ic): 500mA, 集射极击穿电压(Vceo): 80V, 功率(Pd): 225mW, 直流电流增益(hFE@Ic,Vce): 100@100mA,1V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 250mV@10mA,100mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBTA06_R1_00001, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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