产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商: | ST(意法半导体) |
型号: | |
编号: | |
封装: | TO-247-3 |
海关编码: | EAR99 |
参数描述: | 通孔 N 通道 600V 30A(Tc) 208W(Tc) TO-247 |
数据手册: | |
规格
Termination type
Through Hole
Circuit Branch Number
1Channel
Continuous drain current
30A
Transistor polarity
MOSFET
Operating Temperature Range
150℃~-55℃
导通电阻(RDS(on)@Vgs,Id)
85mΩ@10V,15A
阈值电压(Vgs(th)@Id)
4.75V@250uA
输入电容(Ciss@Vds)
1.96nF@100V
C000435258 STW36N60M6 is designed and produced by ST(意法半导体), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000435258 STW36N60M6 reference price ¥64.0774,real-time inventory 3000. TO-247-3 Termination type: Through Hole, Circuit Branch Number: 1Channel, Continuous drain current: 30A, VGS: 25V, Transistor polarity: MOSFET, VDS: 600V, Operating Temperature Range: 150℃~-55℃, Rds On: 0.085Ω, Pd-Power Dissipation: 208W, Package: TO-247-3, Qg: 44.3 nC, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 30A, 导通电阻(RDS(on)@Vgs,Id): 85mΩ@10V,15A, 功率(Pd): 208W, 阈值电压(Vgs(th)@Id): 4.75V@250uA, 栅极电荷(Qg@Vgs): 44.3nC@10V, 输入电容(Ciss@Vds): 1.96nF@100V, 反向传输电容(Crss@Vds): 6pF@100V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STW36N60M6, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.