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MMBFJ176

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:JFET P 通道 30V 225mW 表面贴装型 SOT-23-3
Datasheet:
Datasheet
SPECIFICATION
Category
Junction Field Effect Transistor (JFET)
Pd-Power Dissipation
0.225W
VGS
1V 0.00000001A
Operating Temperature Range
-55℃~150℃
Rds On
250Ω
Package
SOT-23
Termination type
SMD/SMT
Transistor polarity
JFET
FET类型
P沟道
栅源截止电压(VGS(off)@ID)
1V@10nA
栅源击穿电压(V(BR)GSS)
30V
功率(Pd)
225mW
漏源导通电阻(RDS(on))
250Ω
饱和漏源电流(Idss@Vds,Vgs=0)
2mA@15V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
5+
4.25057
10+
3.62323
100+
2.52218
500+
1.98445
QTY(Multiplicity:1):
Stock:
538,639
Mpq:
1
Delivery:
13-17 Business Day
Total:
21.26
C000438493 MMBFJ176 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000438493 MMBFJ176 reference price ¥4.2506,real-time inventory 538639. SOT-23 Pd-Power Dissipation: 0.225W, VGS: 1V 0.00000001A, Operating Temperature Range: -55℃~150℃, Rds On: 250Ω, Package: SOT-23, Termination type: SMD/SMT, Transistor polarity: JFET, FET类型: P沟道, 栅源截止电压(VGS(off)@ID): 1V@10nA, 栅源击穿电压(V(BR)GSS): 30V, 功率(Pd): 225mW, 漏源导通电阻(RDS(on)): 250Ω, 饱和漏源电流(Idss@Vds,Vgs=0): 2mA@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBFJ176, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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