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J113-D74Z

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产商:ON(安森美)
型号:
编号:
封装:TO-92-3
海关编码:EAR99
参数描述:JFET N 通道 35V 625mW 通孔 TO-92-3
数据手册:
规格
Category
Junction Field Effect Transistor (JFET)
Operating Temperature Range
-55℃~150℃
Package
TO-92-3
Transistor polarity
JFET
VGS
500mV
Termination type
Through Hole
Pd-Power Dissipation
0.625W
FET类型
N沟道
栅源截止电压(VGS(off)@ID)
500mV@1uA
栅源击穿电压(V(BR)GSS)
35V
功率(Pd)
625mW
漏源导通电阻(RDS(on))
100Ω
饱和漏源电流(Idss@Vds,Vgs=0)
2mA@15V
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
3.58758
10+
2.77565
100+
1.66534
500+
1.54226
1000+
1.04873
数量(递增量:1):
库存:
1,096,000
最小包装量:
2000
交付周期:
14-19 工作日
共:
3.59
C000445038 J113-D74Z is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000445038 J113-D74Z reference price ¥3.5876,real-time inventory 1096000. TO-92-3 Operating Temperature Range: -55℃~150℃, Package: TO-92-3, Transistor polarity: JFET, VGS: 500mV, Termination type: Through Hole, Pd-Power Dissipation: 0.625W, FET类型: N沟道, 栅源截止电压(VGS(off)@ID): 500mV@1uA, 栅源击穿电压(V(BR)GSS): 35V, 功率(Pd): 625mW, 漏源导通电阻(RDS(on)): 100Ω, 饱和漏源电流(Idss@Vds,Vgs=0): 2mA@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of J113-D74Z, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
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