Mfr.: | TI(德州仪器) |
Mfr. Part #: | |
YJC. No: | |
Package: | TO-263-3 |
ECCN: | EAR99 |
Description: | 表面贴装型 N 通道 60V 200A(Ta),279A(Tc) 300W(Tc) DDPAK/TO-263-3 |
Datasheet: |
C000488599 CSD18535KTTT is designed and produced by TI(德州仪器), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000488599 CSD18535KTTT reference price ¥30.4169,real-time inventory 11350. TO-263-3 Pd-Power Dissipation: 300W, Operating Temperature Range: -55℃~175℃, Circuit Branch Number: 1Channel, Termination type: SMD/SMT, Qg: 81 nC, Height: 4.7 mm, Continuous drain current: 200A, Package: TO-263-3, Length: 9.25 mm, Width: 10.26, Rds On: 0.0023Ω, Transistor polarity: MOSFET, VGS: 20V, VDS: 60V, 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 200A;279A, 导通电阻(RDS(on)@Vgs,Id): 2mΩ@100A,10V, 功率(Pd): 300W, 阈值电压(Vgs(th)@Id): 2.4V@250uA, 栅极电荷(Qg@Vgs): 81nC@10V, 输入电容(Ciss@Vds): 6.62nF@30V, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of CSD18535KTTT, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.