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G1002L

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Mfr.:Goford
Mfr. Part #:
YJC. No:
Package:SOT-23-3L
ECCN:EAR99
Description:N沟道,100V,2A,180mΩ@10V
Datasheet:
SPECIFICATION
Category
MOSFET
Continuous drain current
2A
Pd-Power Dissipation
1.1W
Rds On
1A 10V 0.25Ω
Transistor polarity
N沟道
VDS
100V
VGS
2.5V 0.00025A
Package
SOT-23-3L
类型
1个N沟道
漏源电压(Vdss)
100V
连续漏极电流(Id)
2A
导通电阻(RDS(on)@Vgs,Id)
190mΩ
功率(Pd)
1.3W
阈值电压(Vgs(th)@Id)
2V@250uA
栅极电荷(Qg@Vgs)
10nC@10V
输入电容(Ciss@Vds)
413pF@50V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
3000+
0.98992
6000+
0.96784
9000+
0.85723
30000+
0.84614
75000+
0.71891
QTY(Multiplicity:3000):
Stock:
27,000
Mpq:
3000
Delivery:
14-19 Business Day
Total:
2,969.76

C000558523 G1002L is designed and produced by Goford, and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000558523 G1002L reference price ¥0.9899,real-time inventory 27000. SOT-23-3L Continuous drain current: 2A, Pd-Power Dissipation: 1.1W, Rds On: 1A 10V 0.25Ω, Transistor polarity: N沟道, VDS: 100V, VGS: 2.5V 0.00025A, Package: SOT-23-3L, 类型: 1个N沟道, 漏源电压(Vdss): 100V, 连续漏极电流(Id): 2A, 导通电阻(RDS(on)@Vgs,Id): 190mΩ, 功率(Pd): 1.3W, 阈值电压(Vgs(th)@Id): 2V@250uA, 栅极电荷(Qg@Vgs): 10nC@10V, 输入电容(Ciss@Vds): 413pF@50V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of G1002L, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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