STGWA40H65DFB

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Mfr.:	ST(意法半导体)
Mfr. Part #:	STGWA40H65DFB
YJC. No:	C000618660
Package:	TO-247-3
ECCN:	EAR99
Description:
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

Collector-emitter voltage

650V

Package

TO-247-3

Termination type

Through Hole

Max, gate / emitter voltage

20V

Gate Threshold Voltage-VGE(th)

20V

Pd-Power Dissipation

283W

Collector Current Ic

80A

Operating Temperature Range

-55℃~175℃

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

32.5532

10+

27.4083

25+

25.81806

100+

22.16985

250+

20.95378

600+

19.73772

QTY(Multiplicity:1):

Stock:

4,800

+-

Add To Cart

Quota

Mpq:

600

Delivery:

18-20 Business Day

Total:

￥32.56

C000618660 STGWA40H65DFB is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000618660 STGWA40H65DFB reference price ￥32.5532，real-time inventory 4800. TO-247-3 Collector-emitter voltage: 650V, Package: TO-247-3, Termination type: Through Hole, Max, gate / emitter voltage: 20V, Gate Threshold Voltage-VGE(th): 20V, Pd-Power Dissipation: 283W, Collector Current Ic: 80A, Operating Temperature Range: -55℃~175℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of STGWA40H65DFB, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.