FGH75T65SQD-F155

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Mfr.:	ON(安森美)
Mfr. Part #:	FGH75T65SQD-F155
YJC. No:	C000620273
Package:	TO-247-3
ECCN:	EAR99
Description:
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

Pd-Power Dissipation

375W

Collector-emitter voltage

650V

Gate Threshold Voltage-VGE(th)

20V

Package

TO-247-3

Operating Temperature Range

175℃~-55℃

Collector Current Ic

150A

Termination type

Through Hole

Max, gate / emitter voltage

20V

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

58.18416

10+

53.03926

30+

46.11703

120+

39.47543

270+

38.25936

510+

35.82723

QTY(Multiplicity:1):

Stock:

35,130

+-

Add To Cart

Quota

Mpq:

30

Delivery:

18-20 Business Day

Total:

￥58.19

C000620273 FGH75T65SQD-F155 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000620273 FGH75T65SQD-F155 reference price ￥58.1842，real-time inventory 35130. TO-247-3 Pd-Power Dissipation: 375W, Collector-emitter voltage: 650V, Gate Threshold Voltage-VGE(th): 20V, Package: TO-247-3, Operating Temperature Range: 175℃~-55℃, Collector Current Ic: 150A, Termination type: Through Hole, Max, gate / emitter voltage: 20V. You can download the Chinese information, pin diagram, datasheet data manual function manual of FGH75T65SQD-F155, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.