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J111-D26Z

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产商:ON(安森美)
型号:
编号:
封装:TO-92-3
海关编码:EAR99
参数描述:JFET N-CH 35V 625MW TO92
数据手册:
规格
Category
Junction Field Effect Transistor (JFET)
VGS
3V
Termination type
Through Hole
Pd-Power Dissipation
0.625W
Transistor polarity
JFET
Operating Temperature Range
-55℃~150℃
Package
TO-92-3
FET类型
N沟道
栅源截止电压(VGS(off)@ID)
3V@1uA
栅源击穿电压(V(BR)GSS)
35V
功率(Pd)
625mW
漏源导通电阻(RDS(on))
30Ω
饱和漏源电流(Idss@Vds,Vgs=0)
20mA@15V
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
5+
4.17328
10+
3.2808
100+
1.83524
500+
1.8101
数量(递增量:1):
库存:
654,852
最小包装量:
1
交付周期:
13-17 工作日
共:
20.87
C000621908 J111-D26Z is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000621908 J111-D26Z reference price ¥4.1733,real-time inventory 654852. TO-92-3 VGS: 3V, Termination type: Through Hole, Pd-Power Dissipation: 0.625W, Transistor polarity: JFET, Operating Temperature Range: -55℃~150℃, Package: TO-92-3, FET类型: N沟道, 栅源截止电压(VGS(off)@ID): 3V@1uA, 栅源击穿电压(V(BR)GSS): 35V, 功率(Pd): 625mW, 漏源导通电阻(RDS(on)): 30Ω, 饱和漏源电流(Idss@Vds,Vgs=0): 20mA@15V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of J111-D26Z, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
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