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SI2307A

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:UMW(广东友台半导体)
型号:
编号:
封装:SOT-23
海关编码:EAR99
参数描述:MOS(场效应管)
数据手册:
数据手册
规格
Category
MOSFET
VDS
30V
Pd-Power Dissipation
1.25W
Rds On
10V 3A 0.08Ω
Package
SOT-23
Continuous drain current
3A
Transistor polarity
P沟道
VGS
3V 0.00025A
类型
1个P沟道
漏源电压(Vdss)
30V
连续漏极电流(Id)
3A
功率(Pd)
1.25W
导通电阻(RDS(on)@Vgs,Id)
80mΩ@10V,3A
阈值电压(Vgs(th)@Id)
3V@250uA
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
3.49317
10+
2.8323
25+
2.59056
100+
1.92874
250+
1.74771
500+
1.44629
数量(递增量:1):
库存:
33,000
最小包装量:
3000
交付周期:
14-19 工作日
共:
3.50
C000649042 SI2307A is designed and produced by UMW(广东友台半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000649042 SI2307A reference price ¥3.4932,real-time inventory 33000. SOT-23 VDS: 30V, Pd-Power Dissipation: 1.25W, Rds On: 10V 3A 0.08Ω, Package: SOT-23, Continuous drain current: 3A, Transistor polarity: P沟道, VGS: 3V 0.00025A, 类型: 1个P沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 3A, 功率(Pd): 1.25W, 导通电阻(RDS(on)@Vgs,Id): 80mΩ@10V,3A, 阈值电压(Vgs(th)@Id): 3V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SI2307A, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
数据手册
RFQ
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