MCG30N03A-TP

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Mfr.:	MCC(美微科)
Mfr. Part #:	MCG30N03A-TP
YJC. No:	C000663511
Package:	DFN3333
ECCN:	EAR99
Description:
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Package

DFN3333

类型

1个N沟道

漏源电压(Vdss)

30V

连续漏极电流(Id)

30A

功率(Pd)

20W

导通电阻(RDS(on)@Vgs,Id)

8mΩ@10V,15A

阈值电压(Vgs(th)@Id)

2.5V@250uA

栅极电荷(Qg@Vgs)

28nC@10V

输入电容(Ciss@Vds)

1.02nF@15V

反向传输电容(Crss@Vds)

126pF@15V

工作温度

-55℃~+175℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

5.00372

10+

4.27677

100+

2.97478

500+

2.32283

1000+

1.88794

2000+

1.68769

QTY(Multiplicity:1):

Stock:

35,000

+-

Add To Cart

Quota

Mpq:

5000

Delivery:

14-19 Business Day

Total:

￥5.01

C000663511 MCG30N03A-TP is designed and produced by MCC(美微科), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000663511 MCG30N03A-TP reference price ￥5.0037，real-time inventory 35000. DFN3333 Package: DFN3333, 类型: 1个N沟道, 漏源电压(Vdss): 30V, 连续漏极电流(Id): 30A, 功率(Pd): 20W, 导通电阻(RDS(on)@Vgs,Id): 8mΩ@10V,15A, 阈值电压(Vgs(th)@Id): 2.5V@250uA, 栅极电荷(Qg@Vgs): 28nC@10V, 输入电容(Ciss@Vds): 1.02nF@15V, 反向传输电容(Crss@Vds): 126pF@15V, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MCG30N03A-TP, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.