GT045N10M

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Mfr.:	Goford
Mfr. Part #:	GT045N10M
YJC. No:	C000665433
Package:	TO-263
ECCN:	EAR99
Description:	6mΩ@4.5v
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

Package

TO-263

类型

1个N沟道

漏源电压(Vdss)

100V

连续漏极电流(Id)

139A

功率(Pd)

156W

导通电阻(RDS(on)@Vgs,Id)

4.1mΩ@10V,20A

阈值电压(Vgs(th)@Id)

2V@250uA

栅极电荷(Qg@Vgs)

101.6nC@10V

输入电容(Ciss@Vds)

6.124nF@50V

反向传输电容(Crss@Vds)

15pF@50V

工作温度

-55℃~+150℃@(Tj)

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

800+

9.59732

1600+

8.14315

2400+

7.73598

5600+

7.44521

QTY(Multiplicity:800):

Stock:

4,800

+-

Add To Cart

Quota

Mpq:

800

Delivery:

14-19 Business Day

Total:

￥7,677.86

C000665433 GT045N10M is designed and produced by Goford, and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000665433 GT045N10M reference price ￥9.5973，real-time inventory 4800. TO-263 Package: TO-263, 类型: 1个N沟道, 漏源电压(Vdss): 100V, 连续漏极电流(Id): 139A, 功率(Pd): 156W, 导通电阻(RDS(on)@Vgs,Id): 4.1mΩ@10V,20A, 阈值电压(Vgs(th)@Id): 2V@250uA, 栅极电荷(Qg@Vgs): 101.6nC@10V, 输入电容(Ciss@Vds): 6.124nF@50V, 反向传输电容(Crss@Vds): 15pF@50V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of GT045N10M, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.