STGWA100H65DFB2
| Mfr.: | ST(意法半导体) |
| Mfr. Part #: | |
| YJC. No: | |
| Package: | TO-247-3 |
| ECCN: | EAR99 |
| Description: | IGBT 晶体管 Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT |
| Datasheet: |
C000753669 STGWA100H65DFB2 is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000753669 STGWA100H65DFB2 reference price ￥64.641901，real-time inventory 372. TO-247-3 Termination type: Through Hole, Package: TO-247-3, Pd-Power Dissipation: 441W, Operating Temperature Range: 175℃~-55℃, Collector-emitter voltage: 650V, Gate Threshold Voltage-VGE(th): 20V, Collector Current Ic: 145A, Max, gate / emitter voltage: 20V, IGBT类型: FS(场截止), 集射极击穿电压(Vces): 650V, 集电极电流(Ic): 145A, 功率(Pd): 441W, 栅极阈值电压(Vge(th)@Ic): 2V@15V,100A, 栅极电荷(Qg@Ic,Vge): 288nC, 开启延迟时间(Td(on)): 30ns, 关断延迟时间(Td(off)): 130ns, 导通损耗(Eon): 2.2mJ, 关断损耗(Eoff): 1.4mJ, 反向恢复时间(Trr): 123ns, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STGWA100H65DFB2, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.