产品图片仅供参考,可能与产品实物不同,但不会改变其基 本特征。
产商: | TI(德州仪器) |
型号: | |
编号: | |
封装: | DSBGA-6 |
海关编码: | EAR99 |
参数描述: | 8 V P 通道 NexFET™ 功率 MOSFET |
数据手册: | |
规格
Circuit Branch Number
1Channel
Continuous drain current
3A
Pd-Power Dissipation
0.75W
Transistor polarity
MOSFET
Operating Temperature Range
-55℃~150℃
导通电阻(RDS(on)@Vgs,Id)
16.2mΩ@4.5V,1.5A
阈值电压(Vgs(th)@Id)
1.1V@250uA
C000776618 CSD23203W is designed and produced by TI(德州仪器), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000776618 CSD23203W reference price ¥1.4205,real-time inventory 87000. DSBGA-6 Package: DSBGA-6, Rds On: 0.053Ω, Length: 1.5 mm, Width: 1 mm, VGS: 6V, Termination type: SMD/SMT, Circuit Branch Number: 1Channel, Continuous drain current: 3A, Pd-Power Dissipation: 0.75W, Qg: 6.3 nC, Height: 0.625 mm, Transistor polarity: MOSFET, VDS: 8V, Operating Temperature Range: -55℃~150℃, 类型: 1个P沟道, 漏源电压(Vdss): 8V, 连续漏极电流(Id): 3A, 功率(Pd): 750mW, 导通电阻(RDS(on)@Vgs,Id): 16.2mΩ@4.5V,1.5A, 阈值电压(Vgs(th)@Id): 1.1V@250uA, 栅极电荷(Qg@Vgs): 6.3nC@4.5V, 输入电容(Ciss@Vds): 914pF@4V, 反向传输电容(Crss@Vds): 133pF@4V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of CSD23203W, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.