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FGB20N60SFD-F085

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:D2PAK
ECCN:EAR99
Description:
Datasheet:
SPECIFICATION
Category
IGBT Tube
Collector-emitter voltage
600V
Max, gate / emitter voltage
20V
Operating Temperature Range
-55℃~150℃
Collector Current Ic
20A
Qualification level
AEC-Q101
Pd-Power Dissipation
208W
Gate Threshold Voltage-VGE(th)
20V
Package
D2PAK
Termination type
SMD/SMT
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
600V
集电极电流(Ic)
40A
功率(Pd)
208W
导通损耗(Eon)
0.31mJ
关断损耗(Eoff)
0.13mJ
反向恢复时间(Trr)
111ns
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
35.97014
10+
30.21114
100+
24.43794
QTY(Multiplicity:1):
Stock:
4,800
Mpq:
800
Delivery:
14-19 Business Day
Total:
35.98

C000793911 FGB20N60SFD-F085 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000793911 FGB20N60SFD-F085 reference price ¥35.9701,real-time inventory 4800. D2PAK Collector-emitter voltage: 600V, Max, gate / emitter voltage: 20V, Operating Temperature Range: -55℃~150℃, Collector Current Ic: 20A, Qualification level: AEC-Q101, Pd-Power Dissipation: 208W, Gate Threshold Voltage-VGE(th): 20V, Package: D2PAK, Termination type: SMD/SMT, IGBT类型: FS(场截止), 集射极击穿电压(Vces): 600V, 集电极电流(Ic): 40A, 功率(Pd): 208W, 导通损耗(Eon): 0.31mJ, 关断损耗(Eoff): 0.13mJ, 反向恢复时间(Trr): 111ns, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of FGB20N60SFD-F085, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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