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MMBF4117

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产品图片仅供参考,可能与产品实物不同,但不会改变其基本特征。
产商:ON(安森美)
型号:
编号:
封装:SOT-23
海关编码:EAR99
参数描述:JFET N 通道 40V 225mW 表面贴装型 SOT-23-3
数据手册:
数据手册
规格
Category
Junction Field Effect Transistor (JFET)
Termination type
SMD/SMT
Package
SOT-23
VGS
600mV 0.000000001A
Pd-Power Dissipation
0.225W
Operating Temperature Range
150℃~-55℃
Transistor polarity
JFET
FET类型
N沟道
栅源截止电压(VGS(off)@ID)
600mV@1nA
栅源击穿电压(V(BR)GSS)
40V
功率(Pd)
225mW
饱和漏源电流(Idss@Vds,Vgs=0)
30uA@10V
输入电容(Ciss@Vds)
3pF@10V
工作温度
-55℃~+150℃@(Tj)
店铺:
1001
入驻
合作库存
数量[pcs]
单价[CNY/pcs]
1+
4.90931
10+
3.8236
100+
2.29416
500+
2.12397
1000+
1.44422
数量(递增量:1):
库存:
1,623,000
最小包装量:
3000
交付周期:
14-19 工作日
共:
4.91
C000872338 MMBF4117 is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-Junction Field Effect Transistor (JFET) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000872338 MMBF4117 reference price ¥4.9093,real-time inventory 1623000. SOT-23 Termination type: SMD/SMT, Package: SOT-23, VGS: 600mV 0.000000001A, Pd-Power Dissipation: 0.225W, Operating Temperature Range: 150℃~-55℃, Transistor polarity: JFET, FET类型: N沟道, 栅源截止电压(VGS(off)@ID): 600mV@1nA, 栅源击穿电压(V(BR)GSS): 40V, 功率(Pd): 225mW, 饱和漏源电流(Idss@Vds,Vgs=0): 30uA@10V, 输入电容(Ciss@Vds): 3pF@10V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMBF4117, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
数据手册
RFQ
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