FGA6560WDF

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Mfr.:	ON(安森美)
Mfr. Part #:	FGA6560WDF
YJC. No:	C000953138
Package:	TO-3PN
ECCN:	EAR99
Description:	Trans IGBT Chip N-CH 650V 120A 306W 3-Pin(3+Tab) TO-3P Tube
Datasheet:	Datasheet

SPECIFICATION

Category

IGBT Tube

Max, gate / emitter voltage

30V

Gate Threshold Voltage-VGE(th)

30V

Collector-emitter voltage

650V

Pd-Power Dissipation

306W

Termination type

Through Hole

Operating Temperature Range

-55℃~175℃

Package

TO-3PN

Collector Current Ic

120A

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

3+

24.1334

10+

22.54229

25+

22.28505

100+

20.73205

450+

20.10323

900+

19.51252

QTY(Multiplicity:1):

Stock:

1,750

+-

Add To Cart

Quota

Mpq:

1

Delivery:

17-20 Business Day

Total:

￥72.41

C000953138 FGA6560WDF is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C000953138 FGA6560WDF reference price ￥24.1334，real-time inventory 1750. TO-3PN Max, gate / emitter voltage: 30V, Gate Threshold Voltage-VGE(th): 30V, Collector-emitter voltage: 650V, Pd-Power Dissipation: 306W, Termination type: Through Hole, Operating Temperature Range: -55℃~175℃, Package: TO-3PN, Collector Current Ic: 120A. You can download the Chinese information, pin diagram, datasheet data manual function manual of FGA6560WDF, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.