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MMDT3906_R1_00001

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Mfr.:PANJIT(强茂)
Mfr. Part #:
YJC. No:
Package:SOT-363
ECCN:EAR99
Description:MMDT3906
Datasheet:
SPECIFICATION
Category
Bipolar Transistor (triode)
Transistor polarity
2 PNP(双)
Pd-Power Dissipation
0.2W
Collector Current Ic
0.2A
Package
SOT-363
Collector-emitter voltage
40V
晶体管类型
PNP
集电极电流(Ic)
200mA
集射极击穿电压(Vceo)
40V
功率(Pd)
200mW
直流电流增益(hFE@Ic,Vce)
100@10mA,1V
集电极截止电流(Icbo)
50nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
400mV@50mA,5mA
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
3000+
0.34135
6000+
0.31658
9000+
0.26262
30000+
0.25786
75000+
0.23161
150000+
0.20078
QTY(Multiplicity:3000):
Stock:
177,000
Mpq:
3000
Delivery:
14-19 Business Day
Total:
1,024.05

C001124671 MMDT3906_R1_00001 is designed and produced by PANJIT(强茂), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001124671 MMDT3906_R1_00001 reference price ¥0.3414,real-time inventory 177000. SOT-363 Transistor polarity: 2 PNP(双), Pd-Power Dissipation: 0.2W, Collector Current Ic: 0.2A, Package: SOT-363, Collector-emitter voltage: 40V, 晶体管类型: PNP, 集电极电流(Ic): 200mA, 集射极击穿电压(Vceo): 40V, 功率(Pd): 200mW, 直流电流增益(hFE@Ic,Vce): 100@10mA,1V, 集电极截止电流(Icbo): 50nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 400mV@50mA,5mA, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of MMDT3906_R1_00001, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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