APTGTQ200SK65T3G

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Mfr.:	Microsemi(美高森美)
Mfr. Part #:	APTGTQ200SK65T3G
YJC. No:	C001189113
Package:	SP3F
ECCN:	EAR99
Description:	IGBT Power Module
Datasheet:

SPECIFICATION

Category

IGBT Tube

Types

,晶体管-IGBT-模块

Termination type

Chassis Mount

Max, gate / emitter voltage

20V

Pd-Power Dissipation

483W

Collector-emitter saturation voltage

650V

Operating Temperature Range

125℃~-40℃

Gate Threshold Voltage-VGE(th)

20V

Collector-emitter voltage

650V

Collector Current Ic

200A

Package

SP3F

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

2+

734.1012

QTY(Multiplicity:1):

Stock:

5

+-

Add To Cart

Quota

Mpq:

1

Delivery:

17-20 Business Day

Total:

￥1,468.21

C001189113 APTGTQ200SK65T3G is designed and produced by Microsemi(美高森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001189113 APTGTQ200SK65T3G reference price ￥734.1012，real-time inventory 5. SP3F Types: ,晶体管-IGBT-模块, Termination type: Chassis Mount, Max, gate / emitter voltage: 20V, Pd-Power Dissipation: 483W, Collector-emitter saturation voltage: 650V, Operating Temperature Range: 125℃~-40℃, Gate Threshold Voltage-VGE(th): 20V, Collector-emitter voltage: 650V, Collector Current Ic: 200A, Package: SP3F. You can download the Chinese information, pin diagram, datasheet data manual function manual of APTGTQ200SK65T3G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.