1N4150W-HE3-18
| Mfr.: | Vishay(威世) |
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| YJC. No: | |
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| ECCN: | EAR99 |
| Description: | DIODE GEN PURP 50V 200MA SOD123 |
| Datasheet: |
C001228316 1N4150W-HE3-18 is designed and produced by Vishay(威世), and is available for sale in the Discrete Semiconductor-Diode-Rectifier Diode of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001228316 1N4150W-HE3-18 reference price ￥2.5257，real-time inventory 310000. Reverse recovery time: 4nS, If-forward Current: 0.2A, Qualification level: AEC-Q101, Vr-reverse voltage: 50V, Termination type: 贴片, Operating Temperature Range: -55℃~+150℃, Operating Temperature-Max: +150℃, Operating Temperature-Min: -55℃, VRWM: 50V, junction capacitance: 2.5pF, Vf-Forward Voltage: 1V, Reverse Leakage Current: 0.0000001A. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N4150W-HE3-18, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.