C001333437 CE3512K2-C1 is designed and produced by California Eastern Laboratories, and is available for sale in the Integrated Circuit RF/Radio RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is 4-Micro-X, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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Home Products Integrated Circuit RF/Radio RFFETMOSFET

CE3512K2-C1

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Mfr.:	California Eastern Laboratories
Mfr. Part #:
YJC. No:
Package:	4-Micro-X
ECCN:	EAR99
Description:	RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X
Datasheet:

SPECIFICATION

Category

RFFETMOSFET

Gain

13.7dB

Continuous drain current

0.015A

Noise factor

0.5dB

Operating Frequency

12000000000Hz

Output Power

0.125W

Package

4-Micro-X

Transistor type

pHEMTFET

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

10000+

5.24824

QTY(Multiplicity:10000):

Stock:

230,000

Mpq:

10000

Delivery:

14-19 Business Day

Total:

￥52,482.40

C001333437 CE3512K2-C1 is designed and produced by California Eastern Laboratories, and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001333437 CE3512K2-C1 reference price ￥5.2482，real-time inventory 230000. 4-Micro-X Gain: 13.7dB, Continuous drain current: 0.015A, Noise factor: 0.5dB, Operating Frequency: 12000000000Hz, Output Power: 0.125W, Package: 4-Micro-X, Transistor type: pHEMTFET. You can download the Chinese information, pin diagram, datasheet data manual function manual of CE3512K2-C1, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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