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NGTB25N120FL2WG

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:EAR99
Description:IGBT 1200V 50A
Datasheet:
SPECIFICATION
Category
IGBT Tube
Pd-Power Dissipation
385W
Package
TO-247-3
Operating Temperature Range
-55℃~175℃
Termination type
通孔
IGBT类型
FS(场截止)
集射极击穿电压(Vces)
1.2kV
集电极电流(Ic)
50A
功率(Pd)
385W
栅极阈值电压(Vge(th)@Ic)
2.4V@15V,25A
栅极电荷(Qg@Ic,Vge)
178nC
开启延迟时间(Td(on))
87ns
关断延迟时间(Td(off))
179ns
导通损耗(Eon)
1.95mJ
关断损耗(Eoff)
0.6mJ
反向恢复时间(Trr)
154ns
工作温度
-55℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
67.44498
10+
57.80999
30+
48.08145
180+
43.12363
540+
38.16582
1080+
35.82723
QTY(Multiplicity:1):
Stock:
3,360
Mpq:
30
Delivery:
18-20 Business Day
Total:
67.45

C001430199 NGTB25N120FL2WG is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-IGBT Tube of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001430199 NGTB25N120FL2WG reference price ¥67.445,real-time inventory 3360. TO-247-3 Pd-Power Dissipation: 385W, Package: TO-247-3, Operating Temperature Range: -55℃~175℃, Termination type: 通孔, IGBT类型: FS(场截止), 集射极击穿电压(Vces): 1.2kV, 集电极电流(Ic): 50A, 功率(Pd): 385W, 栅极阈值电压(Vge(th)@Ic): 2.4V@15V,25A, 栅极电荷(Qg@Ic,Vge): 178nC, 开启延迟时间(Td(on)): 87ns, 关断延迟时间(Td(off)): 179ns, 导通损耗(Eon): 1.95mJ, 关断损耗(Eoff): 0.6mJ, 反向恢复时间(Trr): 154ns, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of NGTB25N120FL2WG, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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