C001500935 1N60G is designed and produced by UMW(广东友台半导体), and is available for sale in the Discrete Semiconductor Transistor MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com. The package is SOT-223, and can be purchased and ordered through the original manufacturer/agent and other formal channels. SZYJC can view real-time inventory, tiered prices, and delivery delivery dates.

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1N60G

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Mfr.:	UMW(广东友台半导体)
Mfr. Part #:
YJC. No:
Package:	SOT-223
ECCN:	EAR99
Description:
Datasheet:

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

600V

连续漏极电流(Id)

导通电阻(RDS(on)@Vgs,Id)

11Ω@10V,500mA

阈值电压(Vgs(th)@Id)

4V@250uA

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

2500+

1.74104

5000+

1.6287

12500+

1.51637

25000+

1.43772

62500+

1.40403

QTY(Multiplicity:2500):

Stock:

27,500

Mpq:

2500

Delivery:

14-19 Business Day

Total:

￥4,352.60

C001500935 1N60G is designed and produced by UMW(广东友台半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001500935 1N60G reference price ￥1.741，real-time inventory 27500. SOT-223 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 1A, 导通电阻(RDS(on)@Vgs,Id): 11Ω@10V,500mA, 阈值电压(Vgs(th)@Id): 4V@250uA. You can download the Chinese information, pin diagram, datasheet data manual function manual of 1N60G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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