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SIHLL110TR-GE3

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Mfr.:Vishay(威世)
Mfr. Part #:
YJC. No:
Package:SOT-223-3
ECCN:EAR99
Description:Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
Datasheet:
Datasheet
SPECIFICATION
Category
RFFETMOSFET
Continuous drain current
1.5A
Transistor polarity
MOSFET
Circuit Branch Number
1Channel
Termination type
SMD/SMT
Operating Temperature Range
150℃~-55℃
Pd-Power Dissipation
0.1W
VDS
100V
Rds On
0.54Ω
Qg
6.1 nC
Package
SOT-223-3
VGS
10V
类型
1个N沟道
漏源电压(Vdss)
100V
连续漏极电流(Id)
1.5A
功率(Pd)
2W;3.1W
导通电阻(RDS(on)@Vgs,Id)
540mΩ@900mA,5V
阈值电压(Vgs(th)@Id)
2V@250uA
栅极电荷(Qg@Vgs)
6.1nC@5V
输入电容(Ciss@Vds)
250pF@25V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
1.62732
QTY(Multiplicity:1):
Stock:
20,847
Mpq:
1
Delivery:
17-19 Business Day
Total:
1.63
C001647629 SIHLL110TR-GE3 is designed and produced by Vishay(威世), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001647629 SIHLL110TR-GE3 reference price ¥1.6273,real-time inventory 20847. SOT-223-3 Continuous drain current: 1.5A, Transistor polarity: MOSFET, Circuit Branch Number: 1Channel, Termination type: SMD/SMT, Operating Temperature Range: 150℃~-55℃, Pd-Power Dissipation: 0.1W, VDS: 100V, Rds On: 0.54Ω, Qg: 6.1 nC, Package: SOT-223-3, VGS: 10V, 类型: 1个N沟道, 漏源电压(Vdss): 100V, 连续漏极电流(Id): 1.5A, 功率(Pd): 2W;3.1W, 导通电阻(RDS(on)@Vgs,Id): 540mΩ@900mA,5V, 阈值电压(Vgs(th)@Id): 2V@250uA, 栅极电荷(Qg@Vgs): 6.1nC@5V, 输入电容(Ciss@Vds): 250pF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of SIHLL110TR-GE3, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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