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STW33N60M2

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Mfr.:ST(意法半导体)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:EAR99
Description:N沟道,600V,26A,125mΩ@10V
Datasheet:
SPECIFICATION
Category
MOSFET
Operating Temperature Range
150℃~-55℃
Continuous drain current
26A
Rds On
0.108Ω
Qg
45.5 nC
VGS
25V
Package
TO-247-3
VDS
600V
Circuit Branch Number
1Channel
Pd-Power Dissipation
190W
Transistor polarity
MOSFET
Termination type
Through Hole
类型
1个N沟道
漏源电压(Vdss)
600V
连续漏极电流(Id)
26A
功率(Pd)
190W
导通电阻(RDS(on)@Vgs,Id)
125mΩ@10V,13A
阈值电压(Vgs(th)@Id)
4V@250uA
栅极电荷(Qg@Vgs)
45.5nC@10V
输入电容(Ciss@Vds)
1.781nF@100V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
52.01819
10+
38.28068
100+
32.08407
500+
26.82208
1000+
25.70823
QTY(Multiplicity:1):
Stock:
11,401
Mpq:
1
Delivery:
14-16 Business Day
Total:
52.02

C001676624 STW33N60M2 is designed and produced by ST(意法半导体), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001676624 STW33N60M2 reference price ¥52.0182,real-time inventory 11401. TO-247-3 Operating Temperature Range: 150℃~-55℃, Continuous drain current: 26A, Rds On: 0.108Ω, Qg: 45.5 nC, VGS: 25V, Package: TO-247-3, VDS: 600V, Circuit Branch Number: 1Channel, Pd-Power Dissipation: 190W, Transistor polarity: MOSFET, Termination type: Through Hole, 类型: 1个N沟道, 漏源电压(Vdss): 600V, 连续漏极电流(Id): 26A, 功率(Pd): 190W, 导通电阻(RDS(on)@Vgs,Id): 125mΩ@10V,13A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 45.5nC@10V, 输入电容(Ciss@Vds): 1.781nF@100V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of STW33N60M2, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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