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SS8050

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Mfr.:MDD(辰达)
Mfr. Part #:
YJC. No:
Package:SOT-23
ECCN:EAR99
Description:Schottky Barrier Diode
Datasheet:
Datasheet
SPECIFICATION
Category
Bipolar Transistor (triode)
Pd-Power Dissipation
0.3W
Transistor polarity
NPN
Collector-emitter voltage
25V
Collector Current Ic
1.5A
Package
SOT-23
晶体管类型
NPN
集电极电流(Ic)
1.5A
集射极击穿电压(Vceo)
25V
功率(Pd)
300mW
直流电流增益(hFE@Ic,Vce)
120@100mA,1V
特征频率(fT)
100MHz
集电极截止电流(Icbo)
100nA
集电极-发射极饱和电压(VCE(sat)@Ic,Ib)
500mV@100mA,5mA
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
6000+
0.14292
QTY(Multiplicity:3000):
Stock:
4,611,000
Mpq:
3000
Delivery:
15-18 Business Day
Total:
857.52
C001717749 SS8050 is designed and produced by MDD(辰达), and is available for sale in the Discrete Semiconductor-Transistor-Bipolar Transistor (triode) of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001717749 SS8050 reference price ¥0.1429,real-time inventory 4611000. SOT-23 Pd-Power Dissipation: 0.3W, Transistor polarity: NPN, Collector-emitter voltage: 25V, Collector Current Ic: 1.5A, Package: SOT-23, 晶体管类型: NPN, 集电极电流(Ic): 1.5A, 集射极击穿电压(Vceo): 25V, 功率(Pd): 300mW, 直流电流增益(hFE@Ic,Vce): 120@100mA,1V, 特征频率(fT): 100MHz, 集电极截止电流(Icbo): 100nA, 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 500mV@100mA,5mA. You can download the Chinese information, pin diagram, datasheet data manual function manual of SS8050, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.
Datasheet
RFQ
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