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FGY60T120SQDN

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Mfr.:ON(安森美)
Mfr. Part #:
YJC. No:
Package:TO-247-3
ECCN:EAR99
Description:IGBT 1200V 120A 517W 通孔 TO-247-3
Datasheet:
SPECIFICATION
Category
MOSFET
Gate Threshold Voltage-VGE(th)
25V
Collector-emitter voltage
1200V
Package
TO-247-3
Max, gate / emitter voltage
25V
Termination type
Through Hole
Collector Current Ic
120A
Pd-Power Dissipation
517W
Operating Temperature Range
-55℃~175℃
集射极击穿电压(Vces)
1.2kV
集电极电流(Ic)
120A
功率(Pd)
517W
栅极阈值电压(Vge(th)@Ic)
1.95V@15V,60A
栅极电荷(Qg@Ic,Vge)
311nC
开启延迟时间(Td(on))
52ns
关断延迟时间(Td(off))
296ns
工作温度
-55℃~+175℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
106.11663
10+
90.95441
100+
75.79402
500+
66.87688
1000+
60.1892
QTY(Multiplicity:1):
Stock:
4,770
Mpq:
30
Delivery:
14-19 Business Day
Total:
106.12

C001752342 FGY60T120SQDN is designed and produced by ON(安森美), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001752342 FGY60T120SQDN reference price ¥106.1166,real-time inventory 4770. TO-247-3 Gate Threshold Voltage-VGE(th): 25V, Collector-emitter voltage: 1200V, Package: TO-247-3, Max, gate / emitter voltage: 25V, Termination type: Through Hole, Collector Current Ic: 120A, Pd-Power Dissipation: 517W, Operating Temperature Range: -55℃~175℃, 集射极击穿电压(Vces): 1.2kV, 集电极电流(Ic): 120A, 功率(Pd): 517W, 栅极阈值电压(Vge(th)@Ic): 1.95V@15V,60A, 栅极电荷(Qg@Ic,Vge): 311nC, 开启延迟时间(Td(on)): 52ns, 关断延迟时间(Td(off)): 296ns, 工作温度: -55℃~+175℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of FGY60T120SQDN, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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