JAN1N5553

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Mfr.:	Microsemi(美高森美)
Mfr. Part #:	JAN1N5553
YJC. No:	C001777308
Package:
ECCN:	EAR99
Description:	DIODE GEN PURP 800V 3A AXIAL
Datasheet:

SPECIFICATION

Category

Rectifier Diode

Termination type

通孔

Reverse recovery time

2000nS

Operating Temperature Range

-65℃~+175℃

If-forward Current

9A

Vr-reverse voltage

800V

Operating Temperature-Min

-65℃

Reverse Leakage Current

0.000001A

Vf-Forward Voltage

1.3V

Operating Temperature-Max

+175℃

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

1+

104.02055

10+

95.60163

25+

91.67279

100+

80.72818

250+

76.79935

500+

71.84154

QTY(Multiplicity:1):

Stock:

196

+-

Add To Cart

Quota

Mpq:

1

Delivery:

18-20 Business Day

Total:

￥104.03

C001777308 JAN1N5553 is designed and produced by Microsemi(美高森美), and is available for sale in the Discrete Semiconductor-Diode-Rectifier Diode of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001777308 JAN1N5553 reference price ￥104.0206，real-time inventory 196. Termination type: 通孔, Reverse recovery time: 2000nS, Operating Temperature Range: -65℃~+175℃, If-forward Current: 9A, Vr-reverse voltage: 800V, Operating Temperature-Min: -65℃, Reverse Leakage Current: 0.000001A, Vf-Forward Voltage: 1.3V, Operating Temperature-Max: +175℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of JAN1N5553, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.