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HS8K1TB

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Mfr.:ROHM(罗姆)
Mfr. Part #:
YJC. No:
Package:HSML3030L-10
ECCN:EAR99
Description:MOSFET - 阵列 2 N-通道(双) 30V 10A(Ta),11A(Ta) 2W(Ta) 表面贴装型 HSML3030L10
Datasheet:
SPECIFICATION
Category
RFFETMOSFET
Pd-Power Dissipation
2W
VGS
20V
Qg
6 nC, 7.4 nC
Rds On
0.0118Ω
Termination type
SMD/SMT
Transistor polarity
MOSFET
Package
HSML3030L-10
Continuous drain current
11A
Operating Temperature Range
-55℃~150℃
VDS
30V
Circuit Branch Number
2Channel
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
7.85767
10+
6.87546
100+
4.75202
500+
3.97561
1000+
3.37693
3000+
3.01211
QTY(Multiplicity:1):
Stock:
117,000
Mpq:
3000
Delivery:
18-20 Business Day
Total:
7.86

C001870588 HS8K1TB is designed and produced by ROHM(罗姆), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001870588 HS8K1TB reference price ¥7.8577,real-time inventory 117000. HSML3030L-10 Pd-Power Dissipation: 2W, VGS: 20V, Qg: 6 nC, 7.4 nC, Rds On: 0.0118Ω, Termination type: SMD/SMT, Transistor polarity: MOSFET, Package: HSML3030L-10, Continuous drain current: 11A, Operating Temperature Range: -55℃~150℃, VDS: 30V, Circuit Branch Number: 2Channel. You can download the Chinese information, pin diagram, datasheet data manual function manual of HS8K1TB, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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