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VP0808L-G

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Mfr.:Microchip(微芯)
Mfr. Part #:
YJC. No:
Package:TO-92-3
ECCN:EAR99
Description:通孔 P 通道 80V 280mA(Tj) 1W(Tc) TO-92-3
Datasheet:
SPECIFICATION
Category
RFFETMOSFET
Pd-Power Dissipation
1W
Width
4.19 mm
Circuit Branch Number
1Channel
Transistor polarity
FET
Package
TO-92-3
Height
5.33 mm
VGS
10V
Rds On
Continuous drain current
0.28A
Operating Temperature Range
-55℃~150℃
Length
5.21 mm
VDS
80V
Termination type
Through Hole
类型
1个P沟道
漏源电压(Vdss)
80V
连续漏极电流(Id)
280mA
导通电阻(RDS(on)@Vgs,Id)
5Ω@1A,10V
功率(Pd)
1W
阈值电压(Vgs(th)@Id)
4.5V@1mA
输入电容(Ciss@Vds)
150pF@25V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
18.12669
25+
15.19998
100+
13.68943
QTY(Multiplicity:1):
Stock:
17,000
Mpq:
1000
Delivery:
14-19 Business Day
Total:
18.13

C001909496 VP0808L-G is designed and produced by Microchip(微芯), and is available for sale in the Integrated Circuit-RF/Radio-RFFETMOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C001909496 VP0808L-G reference price ¥18.1267,real-time inventory 17000. TO-92-3 Pd-Power Dissipation: 1W, Width: 4.19 mm, Circuit Branch Number: 1Channel, Transistor polarity: FET, Package: TO-92-3, Height: 5.33 mm, VGS: 10V, Rds On: 5Ω, Continuous drain current: 0.28A, Operating Temperature Range: -55℃~150℃, Length: 5.21 mm, VDS: 80V, Termination type: Through Hole, 类型: 1个P沟道, 漏源电压(Vdss): 80V, 连续漏极电流(Id): 280mA, 导通电阻(RDS(on)@Vgs,Id): 5Ω@1A,10V, 功率(Pd): 1W, 阈值电压(Vgs(th)@Id): 4.5V@1mA, 输入电容(Ciss@Vds): 150pF@25V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of VP0808L-G, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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