TISP61089DR-S
| Mfr.: | Bourns(博恩思) |
| Mfr. Part #: | |
| YJC. No: | |
| Package: | SOIC-8 |
| ECCN: | EAR99 |
| Description: | Thyristor Surge Protection Devices 100V 11A 8-Pin SOIC N T/R |
| Datasheet: |
C002041310 TISP61089DR-S is designed and produced by Bourns(博恩思), and is available for sale in the Discrete Semiconductor-Transistor-SCR of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002041310 TISP61089DR-S reference price ￥5.0496，real-time inventory 28828. SOIC-8 Height: 1.55 mm, Holding Current: 0.15A, Maximum Breakover Current IBO: 57V, Off-state voltage (Vdrm): 100V, Transistor type: Dual Forward Conducting P-Gate Thyristors, Operating Temperature Range: -40℃~85℃, Package: SOIC-8, Length: 5 mm, Width: 4 mm, Termination type: SMD/SMT, Gate trigger current: 0.000005A, 断态峰值电压(Vdrm): 100V, 开关电压(Vs): 64V, 峰值脉冲电流-Ipp(10/1000us): 30A, 漏电流(Idrm): 5uA, 维持电流(Ih): 150mA, 断态电容(Co): 100pF. You can download the Chinese information, pin diagram, datasheet data manual function manual of TISP61089DR-S, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.