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AGM12T08A

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Mfr.:AGMSEMI(芯控源)
Mfr. Part #:
YJC. No:
Package:PDFN(5x6)
ECCN:EAR99
Description:PDFN(5x6)
Datasheet:
SPECIFICATION
Category
MOSFET
类型
1个N沟道
漏源电压(Vdss)
120V
连续漏极电流(Id)
71A
功率(Pd)
96W
导通电阻(RDS(on)@Vgs,Id)
6.7mΩ@10V,20A
阈值电压(Vgs(th)@Id)
1.6V@250uA
栅极电荷(Qg@Vgs)
38nC@10V
输入电容(Ciss@Vds)
2.626nF@60V
工作温度
-55℃~+150℃@(Tj)
Shop:
1001
Settle
Cooperation
QTY[pcs]
Price[CNY/pcs]
1+
4.47435
10+
3.72742
30+
3.35396
100+
2.98049
QTY(Multiplicity:1):
Stock:
413
Mpq:
3000 (圆盘)
Delivery:
2-3 Business Day
Total:
4.48

C002146454 AGM12T08A is designed and produced by AGMSEMI(芯控源), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002146454 AGM12T08A reference price ¥4.4744,real-time inventory 413. PDFN(5x6) 类型: 1个N沟道, 漏源电压(Vdss): 120V, 连续漏极电流(Id): 71A, 功率(Pd): 96W, 导通电阻(RDS(on)@Vgs,Id): 6.7mΩ@10V,20A, 阈值电压(Vgs(th)@Id): 1.6V@250uA, 栅极电荷(Qg@Vgs): 38nC@10V, 输入电容(Ciss@Vds): 2.626nF@60V, 工作温度: -55℃~+150℃@(Tj). You can download the Chinese information, pin diagram, datasheet data manual function manual of AGM12T08A, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.

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