DMD4N65-TU

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Mfr.:	DIYI(迪一)
Mfr. Part #:	DMD4N65-TU
YJC. No:	C002147646
Package:	TO-252
ECCN:	EAR99
Description:	TO-252
Datasheet:	Datasheet

SPECIFICATION

Category

MOSFET

类型

1个N沟道

漏源电压(Vdss)

650V

连续漏极电流(Id)

4A

功率(Pd)

50W

导通电阻(RDS(on)@Vgs,Id)

2.6Ω@10V,2A

阈值电压(Vgs(th)@Id)

4V@250uA

栅极电荷(Qg@Vgs)

100nC@10V

输入电容(Ciss@Vds)

600pF@25V

反向传输电容(Crss@Vds)

23pF@25V

工作温度

-55℃~+150℃

Shop:

1001

Settle

Cooperation

QTY[pcs]

Price[CNY/pcs]

5+

1.7106

50+

1.40474

150+

1.14986

QTY(Multiplicity:5):

Stock:

150

+-

Add To Cart

Quota

Mpq:

75 (管)

Delivery:

2-3 Business Day

Total:

￥8.56

C002147646 DMD4N65-TU is designed and produced by DIYI(迪一), and is available for sale in the Discrete Semiconductor-Transistor-MOSFET of Yuanjingcheng Supply Chain Co., Ltd. https://www.szyjc.com, and can be purchased and ordered through the original manufacturer/agent and other formal channels. C002147646 DMD4N65-TU reference price ￥1.7106，real-time inventory 150. TO-252 类型: 1个N沟道, 漏源电压(Vdss): 650V, 连续漏极电流(Id): 4A, 功率(Pd): 50W, 导通电阻(RDS(on)@Vgs,Id): 2.6Ω@10V,2A, 阈值电压(Vgs(th)@Id): 4V@250uA, 栅极电荷(Qg@Vgs): 100nC@10V, 输入电容(Ciss@Vds): 600pF@25V, 反向传输电容(Crss@Vds): 23pF@25V, 工作温度: -55℃~+150℃. You can download the Chinese information, pin diagram, datasheet data manual function manual of DMD4N65-TU, and check the real-time inventory, price, and delivery date. In special cases, you can make inquiries for quotations, one-click purchases of bom, and selection substitutions. The platform provides data API docking, real-time inventory VMI services, and online EDI transactions.